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ShenZhen Mingjiada Electronics Co.,Ltd.
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Silicon Carbide Modules FF08MR12W1MA1B11ABPSA1 1200V Half Bridge Module

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Silicon Carbide Modules FF08MR12W1MA1B11ABPSA1 1200V Half Bridge Module

Brand Name : Original Factory

Model Number : FF08MR12W1MA1B11ABPSA1

Certification : Lead free / RoHS Compliant

Place of Origin : CN

MOQ : 10

Price : Contact for Sample

Payment Terms : T/T, L/C, Western Union

Delivery Time : 5-8 work days

Packaging Details : Module

Part Number : FF08MR12W1MA1B11ABPSA1

FET Type : 2 N-Channel (Dual)

Drain to Source Voltage (Vdss) : 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C : 150A (Tj)

Gate Charge (Qg) (Max) @ Vgs : 15V

Input Capacitance (Ciss) (Max) @ Vds : 600V

Power - Max : 20mW (Tc)

Operating Temperature : -40°C ~ 150°C (TJ)

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Silicon Carbide Modules FF08MR12W1MA1B11ABPSA1 1200V Half Bridge Module

Overview Of FF08MR12W1MA1B11ABPSA1

FF08MR12W1MA1B11ABPSA1 is 8 mΩ halfbridge module implementing the new CoolSiC™Automotive MOSFET 1200V, NTC temperature sensor and PressFIT contact technology. With the full automotive qualification, the field of applications for CoolSIC™ is now extended to high voltage automotive applications with high efficiency and switching frequency requirements, such as HV/HV DC-DC step-up converters, multiphase inverters and fast-switching auxiliary drives like fuel-cell compressors.

Product Attributes Of FF08MR12W1MA1B11ABPSA1

Part Number FF08MR12W1MA1B11ABPSA1

Product Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

150A (Tj)

Rds On (Max) @ Id, Vgs

9.8mOhm @ 150A, 15V

Vgs(th) (Max) @ Id

5.55V @ 90mA

Gate Charge (Qg) (Max) @ Vgs

15V

Input Capacitance (Ciss) (Max) @ Vds

600V

Power - Max

20mW (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

AG-EASY1BM-2

Features Of FF08MR12W1MA1B11ABPSA1

  • High gate threshold voltage preventing parasitic turn-on Vth = 4.4 V
  • IGBT compatible driving voltage VGS=-5V / +15V
  • Intrinsic diode with low reverse recovery
  • Low stray inductance 5nH
  • Blocking voltage 1200V
  • Low Switching Losses
  • Low Qg and Crss
  • Tvjop=150°C


Potential Applications Of FF08MR12W1MA1B11ABPSA1

  • Automotive Applications
  • Hybrid und Battery Electric Vehicles
  • Commercial, Construction and Agriculture Vehicles
  • HV/HV DC-DC Converter
  • Main Inverter
  • Auxiliary Drives

Package Outlines Of FF08MR12W1MA1B11ABPSA1

Silicon Carbide Modules FF08MR12W1MA1B11ABPSA1 1200V Half Bridge Module

FAQ

Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.


Product Tags:

MOSFET Silicon Carbide Modules

      

Silicon Carbide Modules 1200V

      

1200V IGBT Half Bridge Module

      
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